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IRF100P219XKMA1

Infineon Technologies
IRF100P219XKMA1 HongDa Electronics IRF100P219XKMA1
  • Manufacturer Part# IRF100P219XKMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRENCH_MOSFETS
  • More DetailN-Channel 100V 341W (Tc) Through Hole TO-247AC
In Stock: 1000

Can ship immediately

Datasheet:
IRF100P219XKMA1 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):341W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:12020pF @ 50V
  • Vgs (Max):±20V
  • Series:StrongIRFET™

 

  • Vgs(th) (Max) @ Id:3.8V @ 278µA
  • Rds On (Max) @ Id, Vgs:1.7 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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