IRF5802TR Infineon Technologies | HongDa Electronics

IRF5802TR HongDa Electronics

Manufacturer Part# IRF5802TR
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 150V 0.9A 6-TSOP
More DetailN-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Mi...

In Stock: 1000

Can ship immediately

Datasheet:

IRF5802TR Datasheet

Technical Details

Vgs(th) (Max) @ Id:5.5V @ 250µA
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:Micro6™(TSOP-6)
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):2W (Ta)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:88pF @ 25V
Vgs (Max):±30V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 540mA, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drain to Source Voltage (Vdss):150V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Obsolete
Packaging:Cut Tape (CT)

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