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IRF5810TR

Infineon Technologies
IRF5810TR HongDa Electronics IRF5810TR
  • Manufacturer Part# IRF5810TR
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2P-CH 20V 2.9A 6-TSOP
  • More DetailMosfet Array 2 P-Channel (Dual) 20V 2.9A 960mW Sur...
In Stock: 1000

Can ship immediately

Datasheet:
IRF5810TR Datasheet

Technical Details

  • Series:HEXFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • FET Type:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.9A
  • Rds On (Max) @ Id, Vgs:90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 16V
  • Power - Max:960mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP

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