IRF5810TR Infineon Technologies | HongDa Electronics

IRF5810TR HongDa Electronics

Manufacturer Part# IRF5810TR
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET 2P-CH 20V 2.9A 6-TSOP
More DetailMosfet Array 2 P-Channel (Dual) 20V 2.9A 960mW Sur...

In Stock: 1000

Can ship immediately

Datasheet:

IRF5810TR Datasheet

Technical Details

Series:HEXFET®
Packaging:Tape & Reel (TR)
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.9A
Rds On (Max) @ Id, Vgs:90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 16V
Power - Max:960mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP

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