IRF7769L2TRPBF Infineon Technologies | HongDa Electronics

IRF7769L2TRPBF HongDa Electronics

Manufacturer Part# IRF7769L2TRPBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 100V DIRECTFET L8
More DetailN-Channel 100V 375A (Tc) 3.3W (Ta), 125W (Tc) Surf...

In Stock: 1000

Can ship immediately

Datasheet:

IRF7769L2TRPBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:4V @ 250µA
Package / Case:DirectFET™ Isometric L8
Supplier Device Package:DIRECTFET L8
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):3.3W (Ta), 125W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:11560pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:3.5 mOhm @ 74A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:375A (Tc)
Drain to Source Voltage (Vdss):100V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tape & Reel (TR)

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