• Manufacturer Part# IRF840LPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 500V 8A TO-262N-Channel 500V 8A (Tc) 1...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:850 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263AB
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W.

2. FEATURES

    1. Dynamic dV/dt rating

    2. Repetitive avalanche rated

    3. Fast switching

    4. Ease of paralleling

    5. Simple drive requirements

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3. Package Information

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