IRF8915 Infineon Technologies | HongDa Electronics

IRF8915 HongDa Electronics

Manufacturer Part# IRF8915
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET 2N-CH 20V 8.9A 8-SOIC
More DetailMosfet Array 2 N-Channel (Dual) 20V 8.9A 2W Surfac...

In Stock: 1000

Can ship immediately

Datasheet:

IRF8915 Datasheet

Technical Details

Series:HEXFET®
Packaging:Tube
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8.9A
Rds On (Max) @ Id, Vgs:18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO

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