• Manufacturer Part# IRF840STRL
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 500V 8A D2PAKN-Channel 500V 8A (Tc) 3....
  • More DetailN/A
In Stock: 1000

Can ship immediately

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:850 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):3.1W (Ta), 125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

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2. FEATURES

    1. Surface mount

    2. Available in tape and reel

    3. Dynamic dV/dt rating

    4. Repetitive avalanche rated

    5. Fast switching

    6. Ease of paralleling

    7. Simple drive requirement

3. Package Information

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