IRF9333PBF Infineon Technologies | HongDa Electronics

IRF9333PBF HongDa Electronics

Manufacturer Part# IRF9333PBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET P-CH 30V 9.2A 8-SO
More DetailP-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-...

In Stock: 1000

Can ship immediately

Datasheet:

IRF9333PBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:2.4V @ 25µA
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):2.5W (Ta)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:19.4 mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta)
Drain to Source Voltage (Vdss):30V
Technology:MOSFET (Metal Oxide)
FET Type:P-Channel
Part Status:Discontinued at Digi-Key
Packaging:Tube

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