IRF9Z14S Vishay Siliconix | HongDa Electronics

IRF9Z14S HongDa Electronics

Manufacturer Part# IRF9Z14S
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET P-CH 60V 6.7A D2PAK
More DetailP-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Surfac...

In Stock: 1000

Can ship immediately

Datasheet:

IRF9Z14S Datasheet

Technical Details

Vgs(th) (Max) @ Id:4V @ 250µA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):3.7W (Ta), 43W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:270pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

Series:--
Rds On (Max) @ Id, Vgs:500 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:6.7A (Tc)
Drain to Source Voltage (Vdss):60V
Technology:MOSFET (Metal Oxide)
FET Type:P-Channel
Part Status:Obsolete
Packaging:Tube

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