IRFN214BTA_FP001

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-92-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.8W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:275pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:2 Ohm @ 300mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
• Drain to Source Voltage (Vdss):250V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Box (TB)