IRFTS9342TRPBF

Technical Details

• Vgs(th) (Max) @ Id:2.4V @ 25µA
• Package / Case:SOT-23-6
• Supplier Device Package:6-TSOP
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:595pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

• Series:HEXFET®
• Rds On (Max) @ Id, Vgs:40 mOhm @ 5.8A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)