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IRFZ24NSTRRPBF

Infineon Technologies
IRFZ24NSTRRPBF HongDa Electronics IRFZ24NSTRRPBF
  • Manufacturer Part# IRFZ24NSTRRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 55V 17A D2PAK
  • More DetailN-Channel 55V 17A (Tc) 3.8W (Ta), 45W (Tc) Surface...
In Stock: 1000

Can ship immediately

Datasheet:
IRFZ24NSTRRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3.8W (Ta), 45W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:370pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:70 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drain to Source Voltage (Vdss):55V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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