IRL530NSTRRPBF Infineon Technologies | HongDa Electronics

IRL530NSTRRPBF HongDa Electronics

Manufacturer Part# IRL530NSTRRPBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 100V 17A D2PAK
More DetailN-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surfac...

In Stock: 1000

Can ship immediately

Datasheet:

IRL530NSTRRPBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:2V @ 250µA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):3.8W (Ta), 79W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:34nC @ 5V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:100 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drain to Source Voltage (Vdss):100V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Not For New Designs
Packaging:Tape & Reel (TR)

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