IRL7472L1TRPBF

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:DirectFET™ Isometric L8
• Supplier Device Package:DIRECTFET L8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):3.8W (Ta), 341W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:20082pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:330nC @ 4.5V

• Series:StrongIRFET™
• Rds On (Max) @ Id, Vgs:0.59 mOhm @ 195A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:375A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)