IRLBD59N04ETRLP Infineon Technologies | HongDa Electronics

IRLBD59N04ETRLP HongDa Electronics

IRLBD59N04ETRLP

Manufacturer Part# IRLBD59N04ETRLP
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 40V 59A D2PAK-5
More DetailN-Channel 40V 59A (Tc) 130W (Tc) Surface Mount TO-...

In Stock: 1000

Can ship immediately

Datasheet:

IRLBD59N04ETRLP Datasheet

Technical Details

Vgs(th) (Max) @ Id:2V @ 250µA
Package / Case:TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package:TO-263-5
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):130W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:2190pF @ 25V
Vgs (Max):±10V
Gate Charge (Qg) (Max) @ Vgs:50nC @ 5V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:18 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drain to Source Voltage (Vdss):40V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Obsolete
Packaging:Tape & Reel (TR)

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