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IRLHM630TRPBF

Infineon Technologies
IRLHM630TRPBF HongDa Electronics IRLHM630TRPBF
  • Manufacturer Part# IRLHM630TRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 21A PQFN
  • More DetailN-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (T...
In Stock: 4000

Can ship immediately

Datasheet:
IRLHM630TRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.1V @ 50µA
  • Package / Case:8-VQFN Exposed Pad
  • Supplier Device Package:PQFN (3x3)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.7W (Ta), 37W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3170pF @ 25V
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:62nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:3.5 mOhm @ 20A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 40A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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