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1. Describe
These P-channel MOSFETs from International Rectifier utilize advanced processing technology to achieve positively low on-resistance per silicon surface. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET® power MOSFETs, provides designers with an extremely efficient and reliable device for battery and load management. The standard SOT-23 package integrates a thermally enhanced large-pad lead frame to produce the industry's smallest HEXFET power MOSFET. This package, called Micro3™, is ideal for applications where printed circuit board space is at a premium. Micro3's low profile (<1.1mm) makes it easy to adapt to extremely thin application environments, such as portable electronic products and PCMCIA cards. Thermal resistance and power consumption are the best.
2. Feature
1. Ultra-low on-resistance
2. P-channel MOSFET
3. SOT-23 footprint
4. Low profile (<1.1mm)
5. Provide tape and reel form
6. Fast switching
7. Lead-free
8. RoHS compliant, halogen-free
3. Electrical Characteristics
4. Package overview
