IRLZ34NPBF Infineon Technologies | HongDa Electronics

IRLZ34NPBF HongDa Electronics

Manufacturer Part# IRLZ34NPBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 55V 30A TO-220AB
More DetailN-Channel 55V 30A (Tc) 68W (Tc) Through Hole TO-22...

In Stock: 30442

Can ship immediately

Datasheet:

IRLZ34NPBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:2V @ 250µA
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):68W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:880pF @ 25V
Vgs (Max):±16V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 5V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:35 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drain to Source Voltage (Vdss):55V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tube

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