IXFJ32N50Q

Technical Details

• Vgs(th) (Max) @ Id:4V @ 4mA
• Package / Case:TO-220-3, Short Tab
• Supplier Device Package:TO-268
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):360W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:153nC @ 10V

• Series:HiPerFET™
• Rds On (Max) @ Id, Vgs:150 mOhm @ 16A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:32A (Tc)
• Drain to Source Voltage (Vdss):500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube