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IXFL38N100P

IXYS
IXFL38N100P HongDa Electronics IXFL38N100P
  • Manufacturer Part# IXFL38N100P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1000V 29A I5-PAK
  • More DetailN-Channel 1000V 29A (Tc) 520W (Tc) Through Hole IS...
In Stock: 1000

Can ship immediately

Datasheet:
IXFL38N100P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:6.5V @ 1mA
  • Package / Case:ISOPLUSi5-Pak™
  • Supplier Device Package:ISOPLUSi5-Pak™
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):520W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:24000pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:350nC @ 10V

 

  • Series:HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs:230 mOhm @ 19A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:29A (Tc)
  • Drain to Source Voltage (Vdss):1000V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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