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IXFR32N80P Discrete Semiconductor Products

IXYS
IXFR32N80P HongDa Electronics IXFR32N80P
  • Manufacturer Part# IXFR32N80P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 800V 20A ISOPLUS247
  • More DetailN-Channel 800V 20A (Tc) 300W (Tc) Through Hole ISO...
In Stock: 1000

Can ship immediately

Datasheet:
IXFR32N80P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 8mA
  • Package / Case:ISOPLUS247™
  • Supplier Device Package:ISOPLUS247™
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):300W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:8800pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V

 

  • Series:HiPerFET™, PolarHT™
  • Rds On (Max) @ Id, Vgs:290 mOhm @ 16A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drain to Source Voltage (Vdss):800V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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