IXTD4N80P-3J

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:14.2nC @ 10V
• Package / Case:Die
• Supplier Device Package:Die
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):100W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:750pF @ 25V
• Vgs (Max):±30V
• Series:PolarHV™

• Vgs(th) (Max) @ Id:5.5V @ 100µA
• Rds On (Max) @ Id, Vgs:3.4 Ohm @ 1.8A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
• Drain to Source Voltage (Vdss):800V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Last Time Buy