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IXTM11N80

IXYS
IXTM11N80 HongDa Electronics IXTM11N80
  • Manufacturer Part# IXTM11N80
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionPOWER MOSFET TO-3
  • More DetailN-Channel 800V 11A (Tc) 300W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IXTM11N80 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:170nC @ 10V
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):300W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 25V
  • Vgs (Max):±20V
  • Series:GigaMOS™

 

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Rds On (Max) @ Id, Vgs:950 mOhm @ 5.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):800V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Last Time Buy

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