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IXTT6N120

IXYS
IXTT6N120 HongDa Electronics IXTT6N120
  • Manufacturer Part# IXTT6N120
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1200V 6A TO-268
  • More DetailN-Channel 1200V 6A (Tc) 300W (Tc) Surface Mount TO...
In Stock: 1000

Can ship immediately

Datasheet:
IXTT6N120 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):300W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1950pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:2.6 Ohm @ 3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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