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IXTU01N100

IXYS
IXTU01N100 HongDa Electronics IXTU01N100
  • Manufacturer Part# IXTU01N100
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1KV .1A I-PAK
  • More DetailN-Channel 1000V 100mA (Tc) 25W (Tc) Through Hole T...
In Stock: 1000

Can ship immediately

Datasheet:
IXTU01N100 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 25µA
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:TO-251
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):25W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:54pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:6.9nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:80 Ohm @ 100mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Tc)
  • Drain to Source Voltage (Vdss):1000V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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