IXYX100N65B3D1 Discrete Semiconductor Products

Technical Details

• Power - Max:830W
• Supplier Device Package:PLUS247™-3
• Package / Case:TO-247-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Reverse Recovery Time (trr):156ns
• Test Condition:400V, 50A, 3 Ohm, 15V
• Td (on/off) @ 25°C:29ns/150ns
• Gate Charge:168nC
• Input Type:Standard
• Switching Energy:1.27mJ (on), 1.37mJ (off)

• Series:GenX3™, XPT™
• Vce(on) (Max) @ Vge, Ic:1.85V @ 15V, 70A
• Current - Collector Pulsed (Icm):460A
• Current - Collector (Ic) (Max):225A
• Voltage - Collector Emitter Breakdown (Max):650V
• IGBT Type:PT
• Moisture Sensitivity Level (MSL):--
• Part Status:Active
• Lead Free Status / RoHS Status:--
• Packaging:Tube