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JANTXV2N6766T1

Microsemi Corporation
JANTXV2N6766T1 HongDa Electronics JANTXV2N6766T1
  • Manufacturer Part# JANTXV2N6766T1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH
  • More DetailN-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through...
In Stock: 1000

Can ship immediately

Datasheet:
JANTXV2N6766T1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package:TO-254AA
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):4W (Ta), 150W (Tc)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:115nC @ 10V
  • Series:Military, MIL-PRF-19500/543

 

  • Rds On (Max) @ Id, Vgs:90 mOhm @ 30A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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