KSB810YTA

Technical Details

• Series:--
• Packaging:Tape & Box (TB) 
• Part Status:Obsolete
• Transistor Type:PNP
• Current - Collector (Ic) (Max):700mA
• Voltage - Collector Emitter Breakdown (Max):25V
• Vce Saturation (Max) @ Ib, Ic:400mV @ 70mA, 700mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
• Power - Max:350mW
• Frequency - Transition:160MHz
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 Short Body
• Supplier Device Package:TO-92S