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KSD2012YYDTU

ON Semiconductor
KSD2012YYDTU HongDa Electronics KSD2012YYDTU
  • Manufacturer Part# KSD2012YYDTU
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 60V 3A TO-220F
  • More DetailBipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Throu...
In Stock: 1000

Can ship immediately

Datasheet:
KSD2012YYDTU Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 2A
  • Current - Collector Cutoff (Max):100µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
  • Power - Max:25W
  • Frequency - Transition:3MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Formed Leads
  • Supplier Device Package:TO-220F-3 (Y-Forming)

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