LN60A01EP-LF

Technical Details

• Series:--
• Packaging:Tube 
• Part Status:Active
• FET Type:3 N-Channel, Common Gate
• FET Feature:Standard
• Drain to Source Voltage (Vdss):600V
• Current - Continuous Drain (Id) @ 25°C:80mA
• Rds On (Max) @ Id, Vgs:190 Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:--
• Input Capacitance (Ciss) (Max) @ Vds:--
• Power - Max:1.3W
• Operating Temperature:-20°C ~ 125°C (TJ)
• Mounting Type:Through Hole
• Package / Case:8-DIP (0.300", 7.62mm)
• Supplier Device Package:8-PDIP