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MB85R4M2TFN-G-ASE1

Fujitsu Electronics America, Inc.
MB85R4M2TFN-G-ASE1 HongDa Electronics MB85R4M2TFN-G-ASE1
  • Manufacturer Part# MB85R4M2TFN-G-ASE1
  • Product CategoryIntegrated Circuits (ICs)
  • Short DescriptionIC FRAM 4M PARALLEL 44TSOP
  • More DetailFRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16)...
In Stock: 531

Can ship immediately

Datasheet:
MB85R4M2TFN-G-ASE1 Datasheet

Technical Details

  • Series:--
  • Packaging:Tray 
  • Part Status:Active
  • Memory Type:Non-Volatile
  • Memory Format:FRAM
  • Technology:FRAM (Ferroelectric RAM)
  • Memory Size:4Mb (256K x 16)
  • Write Cycle Time - Word, Page:150ns

 

  • Access Time:150ns
  • Memory Interface:Parallel
  • Voltage - Supply:1.8 V ~ 3.6 V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP

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