Can ship immediately
Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us: brenda@hongda-ic.com
1. Describe
The device uses the Schottky barrier principle in a large area Metal-to-Silicon Power Diodes. State-of-the-art geometric features Epitaxial structure with oxide passivation and metal capping touch. Ideal for low voltage, high frequency rectification, or As freewheeling and polar diodes in surface mount applications Where compact size and weight are critical to the system.
2. Feature
1. Small and compact surface mount package with J-Bent leads
2. Rectangular packaging for automatic handling
3. Highly stable oxide passivated junction
4. Very low forward voltage drop
5. Pressure protection grommet
6. NRVBA and SBRA prefixes for automotive and other applications Requires unique site and control change requirements; AEC-Q101 Qualification and PPAP Competency*
7. These devices are lead-free, halogen-free/BFR-free, and RoHS compliant Compliance
3. Mechanical properties
1. Housing: Epoxy, Molded
2. Weight: 70 mg (approx.)
3. Surface Finish: All exterior surfaces are corrosion resistant and terminal leads are easy to solder
4. Lead and mounting surface temperature when soldering: up to 260°C for 10 seconds
5. Ships in 12mm tape, 5000 units per 13" reel
6. Polarity: Cathode lead or polarity strip indicated by any notch in the plastic body
4. Pin configuration
5. ELECTRICAL CHARACTERISTICS
