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1. Describe
The device uses the Schottky barrier principle for a large area Metal silicon power diode. State-of-the-art geometric features Epitaxial structure with oxide passivation and metal coating touch. Very suitable for low-voltage, high-frequency rectification, or As a freewheeling and polarity protection diode in surface mount Applications where compact size and weight are critical to the system.
2. Features
1. Small Compact Surface Mountable Package with J−Bend Leads
2. Rectangular Package for Automated Handling
3. Highly Stable Oxide Passivated Junction
4. Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C)
5. Excellent Ability to Withstand Reverse Avalanche Energy Transients
6. Guard−Ring for Stress Protection
7. ESD Ratings:
- Human Body Model = 3B (> 16000 V)
- Machine Model = C (> 400 V)
8. SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
9. These are Pb−Free Devices
3. Mechanical Characteristics
1. Case: Epoxy, Molded
2. Weight: 95 mg (Approximately)
3. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
4. Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
5. Cathode Polarity Band
4. ELECTRICAL CHARACTERISTICS
5. Package overview
