Can ship immediately
Description
The device uses the Schottky barrier principle for a large area Metal-to-silicon power diodes. Latest geometric features Epitaxial structure with oxide passivation and metal coating contact. Very suitable for low voltage, high frequency rectification or As surface mount freewheeling and polarity protection diodes Applications where compact size and weight are critical to the system.
Feature--
1. Small and compact J-shaped bent lead wire that can be surface mounted
2. Rectangular packaging for automatic processing
3. Highly stable oxide passivation junction
4. Very high blocking voltage -200 V
5. 175°C operating junction temperature
6. Protection ring for pressure protection
7. NRVB prefix suitable for automotive and other applications The only site and control change requirement: AEC-Q101 Qualified and capable of PPAP
8. All packages are lead-free*
Mechanical properties
1. Housing: epoxy resin, molded, epoxy resin meets UL 94, V-0
2. Weight: 95 mg (approximately)
3. Surface treatment: all external surfaces are corrosion-resistant and have terminals Leads are easy to solder
4. Lead wire and mounting surface temperature for soldering: Maximum 260°C for 10 seconds
5. Cathode Polarity Band
6. The equipment complies with MSL 1 requirements
7. ESD rating:
- Machine model = A
- Human body model = 1C
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT
