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1. Describe
These devices use the Schottky barrier principle over a large area Metal silicon power diode. State-of-the-art geometric features Epitaxial structure with oxide passivation and metal coating touch. Very suitable for low-voltage, high-frequency rectification, or As a freewheeling and polarity protection diode, surface mount Applications where compact size and weight are critical to the system.
2. Feature
1. Small and compact surface mount package with J-shaped bent leads
2. Rectangular packaging for automatic processing
3. Highly stable oxide passivation junction
4. Very low forward voltage drop (0.5 V Max @ 3.0 A, TJ = 25°C)
5. Excellent ability to withstand reverse avalanche energy transients
6. Guard ring for stress protection
7. The equipment passed ISO 7637 Pulse #1
8. SBRS8 and NRVB prefixes, suitable for automotive and other applications that require unique site and control change requirements;
- AEC-Q101 qualification and PPAP capability*
9. These devices are lead-free, halogen-free/BFR-free and RoHS compliant
3. Mechanical properties
1. Housing: epoxy resin, molded, epoxy resin conform to UL 94 V−0
2. Weight: 217 mg (approximately)
3. Surface treatment: all outer surfaces are corrosion resistant and terminals Leads are easy to solder
4. Lead wire and mounting surface temperature for soldering purposes: Up to 260°C for 10 seconds
5. Polarity: The polarity band on the plastic body indicates the cathode lead
6. Equipment meets MSL 1 requirements
7. ESD rating:
- Machine model = C (> 400 V)
- Human body model = 3B (> 8000 V)
4. Electrical characteristics
5. PACKAGE DIMENSIONS
