MCB40P1200LB

Technical Details

• Series:CoolMOS™
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Source
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:58A
• Rds On (Max) @ Id, Vgs:--
• Vgs(th) (Max) @ Id:--

• Gate Charge (Qg) (Max) @ Vgs:--
• Input Capacitance (Ciss) (Max) @ Vds:--
• Power - Max:--
• Operating Temperature:--
• Mounting Type:Surface Mount
• Package / Case:9-SMD Power Module
• Supplier Device Package:SMPD