MDS1100

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Active
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):65V
• Frequency - Transition:1.03GHz
• Noise Figure (dB Typ @ f):--
• Gain:8.9dB

• Power - Max:8750W
• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 5V
• Current - Collector (Ic) (Max):100A
• Operating Temperature:200°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:55TU-1
• Supplier Device Package:55TU-1