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MJD112-1G

ON Semiconductor
MJD112-1G HongDa Electronics MJD112-1G
  • Manufacturer Part# MJD112-1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN DARL 100V 2A IPAK
  • More DetailBipolar (BJT) Transistor NPN - Darlington 100V 2A ...
In Stock: 2159

Can ship immediately

Datasheet:
MJD112-1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Active
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):2A
  • Voltage - Collector Emitter Breakdown (Max):100V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
  • Current - Collector Cutoff (Max):20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V

 

  • Power - Max:1.75W
  • Frequency - Transition:25MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK
  • Base Part Number:MJD112

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