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MJD45H11-1G

ON Semiconductor
MJD45H11-1G HongDa Electronics MJD45H11-1G
  • Manufacturer Part# MJD45H11-1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PNP 80V 8A IPAK
  • More DetailBipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Th...
In Stock: 5229

Can ship immediately

Datasheet:
MJD45H11-1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Active
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):8A
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V

 

  • Power - Max:1.75W
  • Frequency - Transition:90MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK
  • Base Part Number:MJD45H11

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