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MJE200G

ON Semiconductor
MJE200G HongDa Electronics MJE200G
  • Manufacturer Part# MJE200G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 40V 5A TO225AA
  • More DetailBipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Thro...
In Stock: 845

Can ship immediately

Datasheet:
MJE200G Datasheet

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5A
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V

 

  • Power - Max:15W
  • Frequency - Transition:65MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-225AA
  • Base Part Number:MJE200

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