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MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage
MT3S111P(TE12L,F) HongDa Electronics MT3S111P(TE12L,F)
  • Manufacturer Part# MT3S111P(TE12L,F)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionRF SIGE HETEROJUNCTION BIPOLAR N
  • More DetailRF Transistor NPN 6V 100mA 8GHz 1W Surface Mount P...
In Stock: 10000

Can ship immediately

Datasheet:
MT3S111P(TE12L,F) Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1.25dB @ 1GHz
  • Gain:10.5dB

 

  • Power - Max:1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PW-MINI

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