MTB23P06VT4

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):3W (Ta), 90W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1620pF @ 25V
• Vgs (Max):±15V
• Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:120 mOhm @ 11.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:23A (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)