MTB50P03HDLT4G

Technical Details

• Vgs(th) (Max) @ Id:2V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.5W (Ta), 125W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:4900pF @ 25V
• Vgs (Max):±15V
• Gate Charge (Qg) (Max) @ Vgs:100nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:25 mOhm @ 25A, 5V
• Drive Voltage (Max Rds On, Min Rds On):5V
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)