N01L63W3AT25I

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1. Describe

N01L63W3AT25I is an integrated storage device Includes 1 Mbit static random access memory It is organized into 65,536 words in 16 bits. Device Design and manufacture with ON Semiconductor advanced CMOS technology Provides high-speed performance and ultra-low strength. The device operates on a single chip Enable (CE) control and output enable (OE) to Allows easy memory expansion. Byte control (UB and LB) High byte and low byte allowed Independent access. N01L63W3A Yes Most suitable for various applications with low power consumption Key, such as spare battery and handheld equipment. The device can operate in a wide range The temperature range is -40oC to +85oC, and is Provide a package compatible with JEDEC standards Comparing with other standard 64Kb x 16 SRAM.

2. Features

    1. Single Wide Power Supply Range： 2.3 to 3.6 Volts

    2. Very low standby current：2.0µA at 3.0V (Typical)

    3. Very low operating current：2.0mA at 3.0V and 1µs (Typical)

    4. Very low Page Mode operating current：0.8mA at 3.0V and 1µs (Typical)

    5. Simple memory control：Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion

    6. Low voltage data retention：Vcc = 1.8V

    7. Very fast output enable access time：30ns OE access time

    8. Automatic power down to standby mode

    9. TTL compatible three-state output driver

  10. Compact space saving BGA package available

3. Pin Configurations

4. Pin Descriptions

5. Package overview