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NCV1413BDR2G Discrete Semiconductor Products

ON Semiconductor
NCV1413BDR2G HongDa Electronics NCV1413BDR2G
  • Manufacturer Part# NCV1413BDR2G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS 7NPN DARL 50V 0.5A 16SO
  • More DetailBipolar (BJT) Transistor Array 7 NPN Darlington 50...
In Stock: 2500

Can ship immediately

Datasheet:
NCV1413BDR2G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:7 NPN Darlington
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max):--
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V

 

  • Power - Max:--
  • Frequency - Transition:--
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Base Part Number:NCV1413

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