NDB6020P Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D²PAK (TO-263AB)
• Mounting Type:Surface Mount
• Operating Temperature:-65°C ~ 175°C (TJ)
• Power Dissipation (Max):60W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1590pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:35nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:50 mOhm @ 12A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Current - Continuous Drain (Id) @ 25°C:24A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Last Time Buy
• Packaging:Tape & Reel (TR)