NDD60N550U1-1G

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package:IPAK (TO-251)
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):94W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:540pF @ 50V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:550 mOhm @ 4A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:8.2A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube