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1. General Description
These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
2. Features
1. −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
2. Voltage controlled p-channel small signal switch
3. High density cell design for low RDS(ON)
4. High saturation current
3. Pin configuration
