NDUL09N150CG

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:TO-3P-3 Full Pack
• Supplier Device Package:TO-3PF-3
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):3W (Ta), 78W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2025pF @ 30V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:114nC @ 10V
• Series:--

• Rds On (Max) @ Id, Vgs:3 Ohm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:9A (Ta)
• Drain to Source Voltage (Vdss):1500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube