NIF9N05CLT1 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 100µA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.69W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:250pF @ 35V
• Vgs (Max):±15V
• Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:125 mOhm @ 2.6A, 10V
• Drive Voltage (Max Rds On, Min Rds On):3V, 10V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
• Drain to Source Voltage (Vdss):52V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)